Trench N-Channel Supper high density cell design for extremely low Rds(on) Exceptional ON resistance and maximum DC current capability Small package design with SOT-523 .

Standard Product WNM4153 is Pb-free. Features Trench N-Channel Supper high density cell design for extremely low Rds(o.

The WNM4153 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product W.

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